KTC8050S Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC8050S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
KTC8050S Transistor Equivalent Substitute - Cross-Reference Search
KTC8050S Datasheet (PDF)
ktc8050s.pdf
SEMICONDUCTOR KTC8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltag
ktc8050a.pdf
SEMICONDUCTOR KTC8050ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8550A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.0
ktc801f.pdf
SEMICONDUCTOR KTC801FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESBThin fine pitch super mini 6pin.B1Excellent temperature response between these 2 transistor.DIM MILLIMETERS_+A 1.0 0.05High pairing property in hFE._+A1 0.7 0.051 6The follwing characteristics are common for Q1, Q2. _+B 1.0 0.05_
ktc801e.pdf
SEMICONDUCTOR KTC801ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri
ktc801u.pdf
SEMICONDUCTOR KTC801UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_A super-minimold package houses 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Excellent temperature response between these 2 transistor._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High pairing property in hFE.C 0.65T
ktc802e.pdf
SEMICONDUCTOR KTC802ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESHigh Current.1 6 DIM MILLIMETERSLow VCE(sat) . _A 1.6 + 0.05_A1 1.0 + 0.05: VCE(sat) 250mV at IC=200mA/IB=10mA. 52_B 1.6 + 0.05_B1 1.2 + 0.05Complementary to KTA702E.C 0.503 4_D 0.2 + 0.05_H 0.5 + 0.05_J 0.12 + 0.05
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
