KTD1510 Specs and Replacement

Type Designator: KTD1510

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 230 pF

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: TO3PN

 KTD1510 Substitution

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KTD1510 datasheet

 ..1. Size:339K  kec

 ktd1510.pdf pdf_icon

KTD1510

SEMICONDUCTOR KTD1510 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER A Q B DARLINGTON TRANSISTOR. K FEATURES Complementary to KTB2510. DIM MILLIMETERS Recommended for 60W Audio Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL ... See More ⇒

 9.1. Size:644K  kec

 ktd1530.pdf pdf_icon

KTD1510

SEMICONDUCTOR KTD1530 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. A Q B N O K FEATURES DIM MILLIMETERS Complementary to KTB2530. _ A + 15.60 0.20 _ B 4.80 + 0.20 Recommended for 80W Audio Amplifier Output Stage. _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 _ G 3.50 + 0.20 D _ ... See More ⇒

Detailed specifications: KTC9018S, KTC945, KTC945B, KTD1003, KTD1047B, KTD1347, KTD1411, KTD1415V, 2N3904, KTD1530, KTD1624, KTD1691, KTD1824, KTD1824E, KTD1854T, KTD1863, KTD1882

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