All Transistors. KTD1510 Datasheet

 

KTD1510 Datasheet and Replacement


   Type Designator: KTD1510
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 230 pF
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO3PN
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KTD1510 Datasheet (PDF)

 ..1. Size:339K  kec
 ktd1510.pdf pdf_icon

KTD1510

SEMICONDUCTOR KTD1510TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIERA Q BDARLINGTON TRANSISTOR.KFEATURES Complementary to KTB2510.DIM MILLIMETERSRecommended for 60W Audio Amplifier Output Stage. A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25)G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL

 9.1. Size:644K  kec
 ktd1530.pdf pdf_icon

KTD1510

SEMICONDUCTOR KTD1530TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIERDARLINGTON TRANSISTOR.AQ BNO KFEATURES DIM MILLIMETERSComplementary to KTB2530. _A +15.60 0.20_B4.80 + 0.20Recommended for 80W Audio Amplifier Output Stage. _C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20_G 3.50 + 0.20D _

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SC4910 | HBP1036S6R | 2SA2099 | DT430 | MMDT3946LP4

Keywords - KTD1510 transistor datasheet

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