KTD1691 Specs and Replacement

Type Designator: KTD1691

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO126

 KTD1691 Substitution

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KTD1691 datasheet

 ..1. Size:396K  kec

 ktd1691.pdf pdf_icon

KTD1691

SEMICONDUCTOR KTD1691 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE A LARGE CURRENT B D C E FEATURES F High Power Dissipation PC=1.5W(Ta=25 ) Complementary to KTB1151. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L MAXIMUM RATING (Ta=25 ) C 0.7 _ + D 3.2 0.1 CHARACTERISTIC SYMBOL RATING UNIT E 3.5 _ + F 11.0 0.3 VCBO Collector-Bas... See More ⇒

 9.1. Size:50K  kec

 ktd1624.pdf pdf_icon

KTD1691

SEMICONDUCTOR KTD1624 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT A C FEATURES H Adoption of MBIT processes. G Low collector-to-emitter saturation voltage. Fast switching speed. DIM MILLIMETERS Large current capacity and wide ASO. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTB1124. K C 1.7... See More ⇒

 9.2. Size:1380K  blue-rocket-elect

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KTD1691

KTD1624 Rev.G Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features MBIT - , KTB1124 Adoption of MBIT processes, low collector-t... See More ⇒

Detailed specifications: KTD1003, KTD1047B, KTD1347, KTD1411, KTD1415V, KTD1510, KTD1530, KTD1624, C945, KTD1824, KTD1824E, KTD1854T, KTD1863, KTD1882, KTD2686, KTD2854, KTD545

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