All Transistors. KTD1691 Datasheet

 

KTD1691 Datasheet and Replacement


   Type Designator: KTD1691
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO126
 

 KTD1691 Substitution

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KTD1691 Datasheet (PDF)

 ..1. Size:396K  kec
 ktd1691.pdf pdf_icon

KTD1691

SEMICONDUCTOR KTD1691TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW COLLECTOR SATURATION VOLTAGEALARGE CURRENT BDCEFEATURES FHigh Power Dissipation : PC=1.5W(Ta=25 )Complementary to KTB1151.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LMAXIMUM RATING (Ta=25 )C 0.7_+D 3.2 0.1CHARACTERISTIC SYMBOL RATING UNITE 3.5_+F 11.0 0.3VCBOCollector-Bas

 9.1. Size:50K  kec
 ktd1624.pdf pdf_icon

KTD1691

SEMICONDUCTOR KTD1624TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACFEATURESHAdoption of MBIT processes.GLow collector-to-emitter saturation voltage.Fast switching speed.DIM MILLIMETERSLarge current capacity and wide ASO.A 4.70 MAXD _+D B 2.50 0.20Complementary to KTB1124.K C 1.7

 9.2. Size:1380K  blue-rocket-elect
 ktd1624.pdf pdf_icon

KTD1691

KTD1624 Rev.G Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features MBIT -, KTB1124Adoption of MBIT processes, low collector-t

Datasheet: KTD1003 , KTD1047B , KTD1347 , KTD1411 , KTD1415V , KTD1510 , KTD1530 , KTD1624 , 2N5401 , KTD1824 , KTD1824E , KTD1854T , KTD1863 , KTD1882 , KTD2686 , KTD2854 , KTD545 .

History: 2SB792

Keywords - KTD1691 transistor datasheet

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