KTD600K Specs and Replacement

Type Designator: KTD600K

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

 KTD600K Substitution

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KTD600K datasheet

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KTD600K

SEMICONDUCTOR KTD600K TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, A B MEDIUM SPEED SWITCHING APPLICATIONS D C E FEATURES F High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. G Complementary to KTB631K. H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 MAXIMUM RATING (Ta=25 ) E... See More ⇒

Detailed specifications: KTD1824, KTD1824E, KTD1854T, KTD1863, KTD1882, KTD2686, KTD2854, KTD545, 2SA1943, KTD718B, KTD882, KTH2369, KTH2369A, KTN2222AE, KTN2222AU, KTN2222U, KTN2369AS

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