KTD600K Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD600K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
KTD600K Transistor Equivalent Substitute - Cross-Reference Search
KTD600K Datasheet (PDF)
..1. Size:393K kec
ktd600k.pdf
ktd600k.pdf
SEMICONDUCTOR KTD600KTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP, ABMEDIUM SPEED SWITCHING APPLICATIONS DCEFEATURES FHigh breakdown voltage VCEO 120V, high current 1A.Low saturation voltage and good linearity of hFE.GComplementary to KTB631K.HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: KT632B | 2SC90 | MPQ5135
