All Transistors. KTD600K Datasheet

 

KTD600K Datasheet and Replacement


   Type Designator: KTD600K
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO126
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KTD600K Datasheet (PDF)

 ..1. Size:393K  kec
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KTD600K

SEMICONDUCTOR KTD600KTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP, ABMEDIUM SPEED SWITCHING APPLICATIONS DCEFEATURES FHigh breakdown voltage VCEO 120V, high current 1A.Low saturation voltage and good linearity of hFE.GComplementary to KTB631K.HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BF384 | 2SC1353 | DTD114E | UNR221L | ZX5T853G | NJVMJB44H11T4G | CMLT4413

Keywords - KTD600K transistor datasheet

 KTD600K cross reference
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