KTD718B Specs and Replacement

Type Designator: KTD718B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 12 MHz

Collector Capacitance (Cc): 170 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO3PN-E

 KTD718B Substitution

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KTD718B datasheet

 ..1. Size:442K  kec

 ktd718b.pdf pdf_icon

KTD718B

SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 45 50W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTB688B. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 + 0.20 E _... See More ⇒

 8.1. Size:76K  kec

 ktd718.pdf pdf_icon

KTD718B

SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTB688. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RAT... See More ⇒

Detailed specifications: KTD1824E, KTD1854T, KTD1863, KTD1882, KTD2686, KTD2854, KTD545, KTD600K, TIP122, KTD882, KTH2369, KTH2369A, KTN2222AE, KTN2222AU, KTN2222U, KTN2369AS, KTN2369AU

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