KTD718B Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD718B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3P(N)-E
KTD718B Transistor Equivalent Substitute - Cross-Reference Search
KTD718B Datasheet (PDF)
ktd718b.pdf
SEMICONDUCTOR KTD718BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURES O KRecommended for 45 50W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to KTB688B. _A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 + 0.20E_
ktd718.pdf
SEMICONDUCTOR KTD718TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage.DIM MILLIMETERS Complementary to KTB688.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RAT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BTB1197N3
