All Transistors. KTD718B Datasheet

 

KTD718B Datasheet and Replacement


   Type Designator: KTD718B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 12 MHz
   Collector Capacitance (Cc): 170 pF
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO3PN-E
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KTD718B Datasheet (PDF)

 ..1. Size:442K  kec
 ktd718b.pdf pdf_icon

KTD718B

SEMICONDUCTOR KTD718BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURES O KRecommended for 45 50W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to KTB688B. _A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 + 0.20E_

 8.1. Size:76K  kec
 ktd718.pdf pdf_icon

KTD718B

SEMICONDUCTOR KTD718TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage.DIM MILLIMETERS Complementary to KTB688.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RAT

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

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