All Transistors. KTH2369 Datasheet

 

KTH2369 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTH2369
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4.5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 KTH2369 Transistor Equivalent Substitute - Cross-Reference Search

   

KTH2369 Datasheet (PDF)

 ..1. Size:393K  kec
 kth2369 a.pdf

KTH2369 KTH2369

SEMICONDUCTOR KTH2369/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH SPEED SWITCHING APPLICATION.B CFEATURESHigh Frequency Characteristics : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA).Excellent Switching Characteristics.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UN

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top