KTX102E Datasheet, Equivalent, Cross Reference Search
Type Designator: KTX102E
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 2(4) pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TES6
KTX102E Transistor Equivalent Substitute - Cross-Reference Search
KTX102E Datasheet (PDF)
ktx102e.pdf
SEMICONDUCTOR KTX102ETECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORGENERAL PURPOSE APPLICATION.BB1FEATURESIncluding two devices in TES6.(Thin Extreme Super mini type with 6 Pin.)1 6 DIM MILLIMETERSSimplify circuit design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a quantity of parts and manufacturing process.2 5_B 1.6 + 0.05_B1 1.2 + 0.05C 0.503 4_D 0.2 +
ktx102u.pdf
SEMICONDUCTOR KTX102UTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORGENERAL PURPOSE APPLICATION.FEATURESBIncluding two devices in US6.B1(Ultra Super mini type with 6 leads)DIM MILLIMETERS1 6_Simplify circuit design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a quantity of parts and manufacturing process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.10/-0.0
ktx101e.pdf
SEMICONDUCTOR KTX101ETECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.BB1FEATURESIncluding two devices in TES6.(Thin Extreme Super mini type with 6 pin.)1 6 DIM MILLIMETERSSimplify circuit design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a quantity of parts and manufacturing process.2 5_B 1.6 + 0.05_B1 1.2 + 0.05C 0.503 4_D 0.2 +
ktx103e.pdf
SEMICONDUCTOR KTX103ETECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.BB1FEATURESIncluding two devices in TES6.(Thin Extreme Super mini type with 6 pin.)1 6 DIM MILLIMETERSSimplify circuit design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a quantity of parts and manufacturing process.2 5_B 1.6 + 0.05_B1 1.2 + 0.05C 0.503 4_D 0.2
ktx101u.pdf
SEMICONDUCTOR KTX101UTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURESBIncluding two devices in US6.B1(Ultra Super mini type with 6 leads)DIM MILLIMETERS1 6_Simplify circuit design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a quantity of parts and manufacturing process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.10/-0.0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
