KTX411T Specs and Replacement

Type Designator: KTX411T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TSV

 KTX411T Substitution

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KTX411T datasheet

 ..1. Size:46K  kec

 ktx411t.pdf pdf_icon

KTX411T

KTX411T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES DIM MILLIMETERS _ A 2.9 + 0.2 15 Including two(TR, Diode) devices in TSV. B 1.6+0.2/-0.1 _ C 0.70 + 0.05 (Thin Super Mini type with 5 pin) 2 _ D 0.4 + 0.1 Simplify circuit design. E 2.8+0... See More ⇒

 9.1. Size:408K  kec

 ktx412t.pdf pdf_icon

KTX411T

KTX412T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES DIM MILLIMETERS _ A 2.9 + 0.2 15 Including two(TR, Diode) devices in TSV. B 1.6+0.2/-0.1 _ C 0.70 + 0.05 (Thin Super Mini type with 5 pin) 2 _ D 0.4 + 0.1 Simplify circuit design. E 2.8+0... See More ⇒

Detailed specifications: KTX303U, KTX311T, KTX312T, KTX321U, KTX401E, KTX401U, KTX402U, KTX403U, TIP31, KTX412T, KTX421U, KTX511T, KTX512T, KTX711T, KTX811T, KTX955T, MJD112L

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