KTX511T Specs and Replacement

Type Designator: KTX511T

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 210 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TS6

 KTX511T Substitution

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KTX511T datasheet

 ..1. Size:666K  kec

 ktx511t.pdf pdf_icon

KTX511T

KTX511T SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE DC/DC CONVERTER APPLICATIONS. E FEATURES K B K Composite type with a PNP transistor and a Schottky barrier diode DIM MILLIMETERS _ contained in one package facilitating high-density mounting. A 2.9 + 0.2 16 B 1.6+0.2/-0.1 The KTX511T consists of two chips which are equivalent to the ... See More ⇒

 9.1. Size:624K  kec

 ktx512t.pdf pdf_icon

KTX511T

KTX512T SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE DC/DC CONVERTER APPLICATIONS. E FEATURES K B K Composite type with a PNP transistor and a Schottky barrier diode DIM MILLIMETERS _ contained in one package facilitating high-density mounting. A 2.9 + 0.2 16 B 1.6+0.2/-0.1 The KTX512T is formed with two chips, one being equivalent to ... See More ⇒

Detailed specifications: KTX321U, KTX401E, KTX401U, KTX402U, KTX403U, KTX411T, KTX412T, KTX421U, 2SD2499, KTX512T, KTX711T, KTX811T, KTX955T, MJD112L, MJD117L, MJE13003HV, MJE13004D

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