KTX511T Datasheet, Equivalent, Cross Reference Search
Type Designator: KTX511T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 210 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TS6
KTX511T Transistor Equivalent Substitute - Cross-Reference Search
KTX511T Datasheet (PDF)
ktx511t.pdf
KTX511TSEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODEDC/DC CONVERTER APPLICATIONS.EFEATURESK B KComposite type with a PNP transistor and a Schottky barrier diodeDIM MILLIMETERS_contained in one package facilitating high-density mounting. A 2.9 + 0.216B 1.6+0.2/-0.1The KTX511T consists of two chips which are equivalent to the
ktx512t.pdf
KTX512TSEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODEDC/DC CONVERTER APPLICATIONS.EFEATURESK B KComposite type with a PNP transistor and a Schottky barrier diodeDIM MILLIMETERS_contained in one package facilitating high-density mounting. A 2.9 + 0.216B 1.6+0.2/-0.1The KTX512T is formed with two chips, one being equivalent to
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
