2N599 Specs and Replacement
Type Designator: 2N599
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO5
2N599 Substitution
- BJT ⓘ Cross-Reference Search
2N599 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3... See More ⇒
... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.... See More ⇒
Detailed specifications: 2N5982 , 2N5983 , 2N5984 , 2N5985 , 2N5986 , 2N5987 , 2N5988 , 2N5989 , 2SC2383 , 2N5990 , 2N5991 , 2N5992 , 2N5993 , 2N5994 , 2N5995 , 2N5996 , 2N5998 .
Keywords - 2N599 pdf specs
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