All Transistors. KRA301E Datasheet

 

KRA301E Datasheet and Replacement


   Type Designator: KRA301E
   SMD Transistor Code: PA
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: ESM
      - BJT Cross-Reference Search

   

KRA301E Datasheet (PDF)

 0.1. Size:67K  kec
 kra301e-kra306e.pdf pdf_icon

KRA301E

SEMICONDUCTOR KRA301E~KRA306ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_

 8.1. Size:107K  kec
 kra301v-kra306v 1.pdf pdf_icon

KRA301E

SEMICONDUCTOR KRA301V~KRA306VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05

 8.2. Size:388K  kec
 kra301-kra306.pdf pdf_icon

KRA301E

SEMICONDUCTOR KRA301~KRA306TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design.B 1.25 + 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process. 31D 0.3+0.10/-0.05_

 8.3. Size:422K  kec
 kra301v-kra306v.pdf pdf_icon

KRA301E

SEMICONDUCTOR KRA301V~KRA306VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3

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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | BDY12B | ED1602D | 2N2084 | KT208I | DRC9143X | SFE245

Keywords - KRA301E transistor datasheet

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