KRA309V Datasheet, Equivalent, Cross Reference Search
Type Designator: KRA309V
SMD Transistor Code: PJ
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: VSM
KRA309V Transistor Equivalent Substitute - Cross-Reference Search
KRA309V Datasheet (PDF)
kra307v-kra309v 1.pdf
SEMICONDUCTOR KRA307V~KRA309VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 +
kra307v-kra309v.pdf
SEMICONDUCTOR KRA307V~KRA309VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05_
kra307e-kra309e.pdf
SEMICONDUCTOR KRA307E~KRA309ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors_+A 1.60 0.10DSimplify Circuit Design _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.27+0.10/-0.05_High Pack
kra309.pdf
SEMICONDUCTOR KRA309TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors_+A 2.00 0.20D2Simplify Circuit Design_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.3+0.10/-0.05_+Hi
kra307e-kra309e 1.pdf
SEMICONDUCTOR KRA307E~KRA309ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors_+A 1.60 0.10DSimplify Circuit Design _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.27+0.10/-0.05_H
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: D41D11 | 2N975 | 2SD1492
