KRA309V Todos los transistores

 

KRA309V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KRA309V
   Código: PJ
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: VSM

 Búsqueda de reemplazo de transistor bipolar KRA309V

 

KRA309V Datasheet (PDF)

 0.1. Size:389K  kec
kra307v-kra309v 1.pdf pdf_icon

KRA309V

SEMICONDUCTOR KRA307V KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 +

 0.2. Size:88K  kec
kra307v-kra309v.pdf pdf_icon

KRA309V

SEMICONDUCTOR KRA307V KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _

 8.1. Size:87K  kec
kra307e-kra309e.pdf pdf_icon

KRA309V

SEMICONDUCTOR KRA307E KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors _ + A 1.60 0.10 D Simplify Circuit Design _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.27+0.10/-0.05 _ High Pack

 8.2. Size:390K  kec
kra309.pdf pdf_icon

KRA309V

SEMICONDUCTOR KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors _ + A 2.00 0.20 D 2 Simplify Circuit Design _ + B 1.25 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.3+0.10/-0.05 _ + Hi

Otros transistores... KRA306 , KRA306E , KRA306V , KRA307E , KRA307V , KRA308E , KRA308V , KRA309E , 2SC945 , KRA310 , KRA310E , KRA310V , KRA311 , KRA311E , KRA311V , KRA312 , KRA312E .

History: HEPS5004

 

 
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