KRA357 Datasheet, Equivalent, Cross Reference Search
Type Designator: KRA357
SMD Transistor Code: AG
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: USM
KRA357 Transistor Equivalent Substitute - Cross-Reference Search
KRA357 Datasheet (PDF)
kra351-kra357.pdf
SEMICONDUCTOR KRA351~357TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EM B MDIM MILLIMETERSFEATURES _+A 2.00 0.20D2_With Built-in Bias Resistors. +B 1.25 0.15_+C 0.90 0.103Simplify Circuit Design. 1D 0.3+0.10/-0.05_+E 2.10 0.20Reduce a Quantity of Parts a
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
