KRA525T Datasheet. Specs and Replacement
Type Designator: KRA525T 📄📄
SMD Transistor Code: PE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Package: TSV
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KRA525T datasheet
SEMICONDUCTOR KRA521T KRA526T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. E B FEATURES DIM MILLIMETERS _ A 2.9 + 0.2 15 With Built-in Bias Resistors. B 1.6+0.2/-0.1 _ C 0.70 + 0.05 Simplify Circuit Design. 2 _ D 0.4 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. E 2.8+... See More ⇒
Detailed specifications: KRA354, KRA355, KRA356, KRA357, KRA521T, KRA522T, KRA523T, KRA524T, C1815, KRA526T, KRA551E, KRA551F, KRA551U, KRA552E, KRA552F, KRA552U, KRA553E
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