KRA560E Datasheet. Specs and Replacement
Type Designator: KRA560E 📄📄
SMD Transistor Code: PK
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TESV
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KRA560E datasheet
SEMICONDUCTOR KRA560E KRA564E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _ + B1... See More ⇒
SEMICONDUCTOR KRA560U KRA564U EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing ... See More ⇒
SEMICONDUCTOR KRA560F KRA564F EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS Reduce a Quantity of Parts and Manufacturing Process. _ + A 1.0 0.05 _ + A1 0.7 0.05 Thin Fine Pitch Super mini 5 pin Package. _ + ... See More ⇒
Detailed specifications: KRA557F, KRA557U, KRA558E, KRA558F, KRA558U, KRA559E, KRA559F, KRA559U, BC327, KRA560F, KRA560U, KRA561E, KRA561F, KRA561U, KRA562E, KRA562U, KRA563E
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