KRA572E Datasheet. Specs and Replacement

Type Designator: KRA572E  📄📄 

SMD Transistor Code: P9

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 100 kOhm

Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 62

Noise Figure, dB: -

Package: TESV

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KRA572E datasheet

 0.1. Size:81K  kec

 kra566e-kra572e.pdf pdf_icon

KRA572E

SEMICONDUCTOR KRA566E KRA572E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3 4 _ ... See More ⇒

 8.1. Size:70K  kec

 kra566u-kra572u.pdf pdf_icon

KRA572E

SEMICONDUCTOR KRA566U-KRA572U EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D ... See More ⇒

Detailed specifications: KRA568E, KRA568U, KRA569E, KRA569U, KRA570E, KRA570U, KRA571E, KRA571U, A1013, KRA572U, KRA721E, KRA721F, KRA721T, KRA721U, KRA722E, KRA722F, KRA722T

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