KRA729F Datasheet. Specs and Replacement
Type Designator: KRA729F 📄📄
SMD Transistor Code: MJ
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TFS6
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KRA729F datasheet
SEMICONDUCTOR KRA727F KRA729F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 High Packing Density. ... See More ⇒
SEMICONDUCTOR KRA727E KRA729E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 DIM MILLIMETERS Simplify Circuit Design _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Density.... See More ⇒
SEMICONDUCTOR KRA727U KRA729U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors DIM MILLIMETERS 1 6 _ Simplify Circuit Design A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing D... See More ⇒
Detailed specifications: KRA726U, KRA727E, KRA727F, KRA727U, KRA728E, KRA728F, KRA728U, KRA729E, BD136, KRA729U, KRA730E, KRA730F, KRA730U, KRA731E, KRA731F, KRA731U, KRA732E
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