KRA751E Datasheet. Specs and Replacement
Type Designator: KRA751E 📄📄
SMD Transistor Code: PA
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TES6
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KRA751E datasheet
SEMICONDUCTOR KRA751E KRA756E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packi... See More ⇒
SEMICONDUCTOR KRA751F KRA754F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 Thin Fine Pitch Super ... See More ⇒
SEMICONDUCTOR KRA751U KRA756U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Hig... See More ⇒
Detailed specifications: KRA739E, KRA739U, KRA740E, KRA740U, KRA741E, KRA741U, KRA742E, KRA742U, D882, KRA751F, KRA751U, KRA752E, KRA752F, KRA752U, KRA753E, KRA753F, KRA753U
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History: AUY19-4 | BFV57 | 2N3584X | BC341-6 | KRA771U | BFX85 | T1328
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