KRA770E Datasheet. Specs and Replacement

Type Designator: KRA770E  📄📄 

SMD Transistor Code: P7

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 24

Noise Figure, dB: -

Package: TES6

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KRA770E datasheet

 9.1. Size:70K  kec

 kra766e-kra772e.pdf pdf_icon

KRA770E

SEMICONDUCTOR KRA766E KRA772E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _ D 0... See More ⇒

 9.2. Size:70K  kec

 kra766u-kra772u.pdf pdf_icon

KRA770E

SEMICONDUCTOR KRA766U-KRA772U EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2... See More ⇒

Detailed specifications: KRA766E, KRA766U, KRA767E, KRA767U, KRA768E, KRA768U, KRA769E, KRA769U, 2222A, KRA770U, KRA771E, KRA771U, KRA772E, KRA772U, KRC101S, KRC102S, KRC103S

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