KRA772E Datasheet. Specs and Replacement

Type Designator: KRA772E  📄📄 

SMD Transistor Code: P9

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 100 kOhm

Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 62

Noise Figure, dB: -

Package: TES6

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KRA772E datasheet

 0.1. Size:70K  kec

 kra766e-kra772e.pdf pdf_icon

KRA772E

SEMICONDUCTOR KRA766E KRA772E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _ D 0... See More ⇒

 8.1. Size:70K  kec

 kra766u-kra772u.pdf pdf_icon

KRA772E

SEMICONDUCTOR KRA766U-KRA772U EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2... See More ⇒

Detailed specifications: KRA768E, KRA768U, KRA769E, KRA769U, KRA770E, KRA770U, KRA771E, KRA771U, 2SD669A, KRA772U, KRC101S, KRC102S, KRC103S, KRC104S, KRC105S, KRC106S, KRC107S

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