KRC120S Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC120S
SMD Transistor Code: N7
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 24
Noise Figure, dB: -
Package: SOT-23
KRC120S Transistor Equivalent Substitute - Cross-Reference Search
KRC120S Datasheet (PDF)
krc116-krc122.pdf
SEMICONDUCTOR KRC116~KRC122TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONB CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H
krc116m-krc122m.pdf
SEMICONDUCTOR KRC116M~KRC122MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBFEATURESWith Built-in Bias Resistors.DIM MILLIMETERSOSimplify Circuit Design.A 3.20 MAXHM B 4.30 MAXReduce a Quantity of Parts and Manufacturing Process.C 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0
krc116s-krc122s.pdf
SEMICONDUCTOR KRC116S~KRC122STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15Simplify Circuit Design. C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-0.2
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
