KRC406V Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC406V
SMD Transistor Code: NF
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: VSM
KRC406V Transistor Equivalent Substitute - Cross-Reference Search
KRC406V Datasheet (PDF)
krc401v-krc406v.pdf
SEMICONDUCTOR KRC401V~KRC406VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05
krc401e-krc406e.pdf
SEMICONDUCTOR KRC401E~KRC406ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_
krc401-krc406.pdf
SEMICONDUCTOR KRC401~KRC406TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EM B MFEATURES DIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_+B 1.25 0.15Simplify Circuit Design._+C 0.90 0.1031Reduce a Quantity of Parts and Manufacturing Process.D 0.3+0.10/-0.05
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC2257 | 2SD162 | 2SD1706