KRC407V Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC407V
SMD Transistor Code: NH
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: VSM
KRC407V Transistor Equivalent Substitute - Cross-Reference Search
KRC407V Datasheet (PDF)
krc407v-krc409v.pdf
SEMICONDUCTOR KRC407V~KRC409VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 +
krc407e-krc409e.pdf
SEMICONDUCTOR KRC407E~KRC409ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors_+A 1.60 0.10DSimplify Circuit Design _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.27+0.10/-0.05_H
krc407-krc409.pdf
SEMICONDUCTOR KRC407~KRC409TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors_+A 2.00 0.20D2_Simplify Circuit Design B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process 1D 0.3+0.10/-0.05_+
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
