KRC409E Datasheet. Specs and Replacement

Type Designator: KRC409E  📄📄 

SMD Transistor Code: NJ

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: ESM

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KRC409E datasheet

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KRC409E

SEMICONDUCTOR KRC407E KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors _ + A 1.60 0.10 D Simplify Circuit Design _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.27+0.10/-0.05 _ H... See More ⇒

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KRC409E

SEMICONDUCTOR KRC407V KRC409V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 + ... See More ⇒

 8.2. Size:393K  kec

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KRC409E

SEMICONDUCTOR KRC407 KRC409 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors _ + A 2.00 0.20 D 2 _ Simplify Circuit Design B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process 1 D 0.3+0.10/-0.05 _ + ... See More ⇒

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Detailed specifications: KRC406V, KRC407, KRC407E, KRC407V, KRC408, KRC408E, KRC408V, KRC409, 13009, KRC409V, KRC410, KRC410E, KRC410V, KRC411, KRC411E, KRC411V, KRC412

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