All Transistors. KRC414E Datasheet

 

KRC414E Datasheet, Equivalent, Cross Reference Search

Type Designator: KRC414E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: ESM

KRC414E Transistor Equivalent Substitute - Cross-Reference Search

 

KRC414E Datasheet (PDF)

5.1. krc410-411-414.pdf Size:366K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC410, 411, 414 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ ·Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 ·Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _

5.2. krc416v 422v.pdf Size:68K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC416V~KRC422V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS 2 _ ·Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G

5.3. krc416 22e.pdf Size:68K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC416E~KRC422E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ + E 1

5.4. krc416 22.pdf Size:390K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC416~KRC422 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES M B M ·With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.00 0.20 D ·Simplify Circuit Design. 2 _ + B 1.25 0.15 _ + C 0.90 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.3+0.10/-0.05 _ +

5.5. krc413.pdf Size:392K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC413 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ ·Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 ·Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _ + E 2.10

5.6. krc416e 422e.pdf Size:68K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC416E~KRC422E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ + E 1

5.7. krc410e-414e.pdf Size:380K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC410E~KRC414E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ ·H

5.8. krc410v 414v.pdf Size:49K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC410V~KRC414V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS 2 _ ·Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 ·High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 +

5.9. krc412.pdf Size:392K _kec

KRC414E
KRC414E

SEMICONDUCTOR KRC412 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ ·Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 ·Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _ + E 2.10

Datasheet: KRC411V , KRC412 , KRC412E , KRC412V , KRC413 , KRC413E , KRC413V , KRC414 , BD135 , KRC414V , KRC416 , KRC416E , KRC416V , KRC417 , KRC417E , KRC417V , KRC418 .

 


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