KRC416V Datasheet. Specs and Replacement

Type Designator: KRC416V  📄📄 

SMD Transistor Code: N2

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 33

Noise Figure, dB: -

Package: VSM

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KRC416V datasheet

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KRC416V

SEMICONDUCTOR KRC416V KRC422V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _... See More ⇒

 8.1. Size:390K  kec

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KRC416V

SEMICONDUCTOR KRC416 KRC422 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES M B M With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.00 0.20 D Simplify Circuit Design. 2 _ + B 1.25 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.3+0.10/-0.05 _ ... See More ⇒

 8.2. Size:68K  kec

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KRC416V

SEMICONDUCTOR KRC416E KRC422E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors. _ + A 1.60 0.10 D Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ + ... See More ⇒

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Detailed specifications: KRC413, KRC413E, KRC413V, KRC414, KRC414E, KRC414V, KRC416, KRC416E, 2SA1837, KRC417, KRC417E, KRC417V, KRC418, KRC418E, KRC418V, KRC419, KRC419E

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