KRC422V Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC422V
SMD Transistor Code: N9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 62
Noise Figure, dB: -
Package: VSM
KRC422V Transistor Equivalent Substitute - Cross-Reference Search
KRC422V Datasheet (PDF)
krc416v-krc422v.pdf
SEMICONDUCTOR KRC416V~KRC422VEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_
krc416-krc422.pdf
SEMICONDUCTOR KRC416~KRC422EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESM B MWith Built-in Bias Resistors.DIM MILLIMETERS_+A 2.00 0.20DSimplify Circuit Design.2_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.3+0.10/-0.05_
krc416e-krc422e.pdf
SEMICONDUCTOR KRC416E~KRC422EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_+
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
