KRC657F Datasheet. Specs and Replacement

Type Designator: KRC657F  📄📄 

SMD Transistor Code: JG

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TFSV

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KRC657F datasheet

 0.1. Size:389K  kec

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KRC657F

SEMICONDUCTOR KRC657F KRC659F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS Thin Fine Pitch Super mini 5pin Package. _ + A 1.0 0.05 _ + A1 0.7 0.05 _ + B... See More ⇒

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KRC657F

SEMICONDUCTOR KRC657U KRC659U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ A 2.00 + 0.20 Simplify Circuit Design. 2 _ A1 1.3 + 0.1 _ B 2.1 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.... See More ⇒

 8.2. Size:49K  kec

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KRC657F

SEMICONDUCTOR KRC657E KRC659E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _ ... See More ⇒

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Detailed specifications: KRC654E, KRC654F, KRC654U, KRC655E, KRC655U, KRC656E, KRC656U, KRC657E, TIP120, KRC657U, KRC658E, KRC658F, KRC658U, KRC659E, KRC659F, KRC659U, KRC660E

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