KRC666E Datasheet. Specs and Replacement
Type Designator: KRC666E 📄📄
SMD Transistor Code: N2
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 33
Package: TESV
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KRC666E datasheet
SEMICONDUCTOR KRC666E KRC672E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3 ... See More ⇒
SEMICONDUCTOR KRC666U KRC672U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D ... See More ⇒
SEMICONDUCTOR KRC660E KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _... See More ⇒
SEMICONDUCTOR KRC660U KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing ... See More ⇒
Detailed specifications: KRC661F, KRC661U, KRC662E, KRC662U, KRC663F, KRC663U, KRC664F, KRC664U, C5198, KRC666U, KRC667E, KRC667U, KRC668E, KRC668U, KRC669E, KRC669U, KRC670E
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BJT Parameters and How They Relate
History: NB122E | KRC286S | MMUN2112LT1 | 2N5838 | 2N5839 | KRC285U | KRC662E
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