KRC681T Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC681T
SMD Transistor Code: MQB
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 4.8 pF
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
Package: TSV
KRC681T Transistor Equivalent Substitute - Cross-Reference Search
KRC681T Datasheet (PDF)
0.1. Size:357K kec
krc681t-krc686t.pdf
krc681t-krc686t.pdf
SEMICONDUCTOR KRC681T~KRC686TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215High emitter-base voltage : VEBO=25V(Min)B 1.6+0.2/-0.1_C 0.70 + 0.05High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)2_D 0.4 + 0.1Low on resistance : Ron=1(Typ.) (IB=5mA)E 2.8+
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
