All Transistors. KRC682T Datasheet

 

KRC682T Datasheet and Replacement


   Type Designator: KRC682T
   SMD Transistor Code: MRB
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 25 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 4.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 350
   Noise Figure, dB: -
   Package: TSV
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KRC682T Datasheet (PDF)

 9.1. Size:357K  kec
 krc681t-krc686t.pdf pdf_icon

KRC682T

SEMICONDUCTOR KRC681T~KRC686TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215High emitter-base voltage : VEBO=25V(Min)B 1.6+0.2/-0.1_C 0.70 + 0.05High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)2_D 0.4 + 0.1Low on resistance : Ron=1(Typ.) (IB=5mA)E 2.8+

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