All Transistors. KRC825E Datasheet

 

KRC825E Datasheet, Equivalent, Cross Reference Search

Type Designator: KRC825E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TES6

KRC825E Transistor Equivalent Substitute - Cross-Reference Search

 

KRC825E Datasheet (PDF)

5.1. krc821f-824f.pdf Size:512K _kec

KRC825E
KRC825E

SEMICONDUCTOR KRC821F~KRC824F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. 1 6 ·Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 ·High Packing Density. 3

5.2. krc827e 829e.pdf Size:49K _kec

KRC825E
KRC825E

SEMICONDUCTOR KRC827E~KRC829E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. B INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 Simplify Circuit Design. _ A1 1.0 + 0.05 2 5 _ B 1.6 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ B1 1.2 + 0.05 High Packing Densi

5.3. krc828f.pdf Size:391K _kec

KRC825E
KRC825E

SEMICONDUCTOR KRC827F~KRC829F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 ·With Built-in Bias Resistors. DIM MILLIMETERS ·Simplify Circuit Design. _ 2 5 + A 1.0 0.05 _ + A1 0.7 0.05 ·Reduce a Quantity of Parts and Manufacturing Process. _ + B 1.0 0.05 3 _ + ·High Packing De

5.4. krc821e 826e.pdf Size:72K _kec

KRC825E
KRC825E

SEMICONDUCTOR KRC821E~KRC826E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Density.

5.5. krc827u 829u.pdf Size:50K _kec

KRC825E
KRC825E

SEMICONDUCTOR KRC827U~KRC829U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ A 2.00 + 0.20 Simplify Circuit Design. _ 2 5 A1 1.3 + 0.1 _ B 2.1 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. 3 4 D _ B1 1.25 + 0.1 High Packing D

5.6. krc821u 826u.pdf Size:70K _kec

KRC825E
KRC825E

SEMICONDUCTOR KRC821U~KRC826U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ ·Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·High Pa

Datasheet: KRC822F , KRC822U , KRC823E , KRC823F , KRC823U , KRC824E , KRC824F , KRC824U , 431 , KRC825U , KRC826E , KRC826U , KRC827E , KRC827F , KRC827U , KRC828E , KRC828F .

 


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