All Transistors. KRC838U Datasheet

 

KRC838U Datasheet, Equivalent, Cross Reference Search

Type Designator: KRC838U

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 33

Noise Figure, dB: -

Package: US6

KRC838U Transistor Equivalent Substitute - Cross-Reference Search

 

KRC838U Datasheet (PDF)

5.1. krc830f-834f.pdf Size:395K _kec

KRC838U
KRC838U

SEMICONDUCTOR KRC830F~KRC834F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. 1 6 ·Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 ·High Packing Density. 3

5.2. krc836u 842u.pdf Size:69K _kec

KRC838U
KRC838U

SEMICONDUCTOR KRC836U~KRC842U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2+0.1

5.3. krc830u 834u.pdf Size:51K _kec

KRC838U
KRC838U

SEMICONDUCTOR KRC830U~KRC834U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing D

5.4. krc836e 842e.pdf Size:69K _kec

KRC838U
KRC838U

SEMICONDUCTOR KRC836E~KRC842E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _ D 0.2 +

5.5. krc830e 834e.pdf Size:51K _kec

KRC838U
KRC838U

SEMICONDUCTOR KRC830E~KRC834E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Density.

Datasheet: KRC834E , KRC834F , KRC834U , KRC836E , KRC836U , KRC837E , KRC837U , KRC838E , 2SC828 , KRC839E , KRC839U , KRC840E , KRC840U , KRC841E , KRC841T , KRC841U , KRC842E .

 


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