KRC841E Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC841E
SMD Transistor Code: Y8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 4.7
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 33
Noise Figure, dB: -
Package: TES6
KRC841E Transistor Equivalent Substitute - Cross-Reference Search
KRC841E Datasheet (PDF)
krc841t-krc846t.pdf
SEMICONDUCTOR KRC841T~KRC846TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.EK B KFEATURESDIM MILLIMETERS_With Built-in Bias Resistors. A 2.9 + 0.216B 1.6+0.2/-0.1Simplify Circuit Design._C 0.70 0.05+2 5_+D 0.4 0.1Reduce a Quantity of Parts and Manufacturing Process.
krc836e-krc842e.pdf
SEMICONDUCTOR KRC836E~KRC842EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION BB1FEATURESWith Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05C 0.503 4_D 0.
krc836u-krc842u.pdf
SEMICONDUCTOR KRC836U~KRC842UEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBFEATURESB1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
