All Transistors. KRC851E Datasheet

 

KRC851E Datasheet, Equivalent, Cross Reference Search

Type Designator: KRC851E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TES6

KRC851E Transistor Equivalent Substitute - Cross-Reference Search

 

KRC851E Datasheet (PDF)

1.1. krc851e-856e.pdf Size:70K _kec

KRC851E
KRC851E

SEMICONDUCTOR KRC851E~KRC856E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. 1 6 DIM MILLIMETERS ·Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 ·Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 ·High Packing D

4.1. krc851 6u.pdf Size:70K _kec

KRC851E
KRC851E

SEMICONDUCTOR KRC851U~KRC856U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing De

5.1. krc853f.pdf Size:402K _kec

KRC851E
KRC851E

SEMICONDUCTOR KRC851F~KRC854F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. 1 6 ·Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 ·High Packing Density. 3

5.2. krc857e 859e.pdf Size:49K _kec

KRC851E
KRC851E

SEMICONDUCTOR KRC857E~KRC859E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. B INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 Simplify Circuit Design. _ A1 1.0 + 0.05 2 5 _ B 1.6 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ B1 1.2 + 0.05 High Packing Densit

5.3. krc857f-859f.pdf Size:389K _kec

KRC851E
KRC851E

SEMICONDUCTOR KRC857F~KRC859F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. 1 6 ·Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 ·Thin Fine Pitch Super min

5.4. krc857u-859u.pdf Size:49K _kec

KRC851E
KRC851E

SEMICONDUCTOR KRC857U~KRC859U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ A 2.00 + 0.20 ·Simplify Circuit Design. _ 2 5 A1 1.3 + 0.1 _ B 2.1 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. 3 4 D _ B1 1.25 + 0.1 ·High P

Datasheet: KRC841U , KRC842E , KRC842T , KRC842U , KRC843T , KRC844T , KRC845T , KRC846T , AC125 , KRC851F , KRC851U , KRC852E , KRC852F , KRC852U , KRC853E , KRC853F , KRC853U .

 


KRC851E
  KRC851E
  KRC851E
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |