KRC854U Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC854U
SMD Transistor Code: ND
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: US6
KRC854U Transistor Equivalent Substitute - Cross-Reference Search
KRC854U Datasheet (PDF)
krc851f-krc854f.pdf
SEMICONDUCTOR KRC851F~KRC854FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.
krc851u-krc856u.pdf
SEMICONDUCTOR KRC851U~KRC856UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High Packing
krc851e-krc856e.pdf
SEMICONDUCTOR KRC851E~KRC856ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packin
krc857e-krc859e.pdf
SEMICONDUCTOR KRC857E~KRC859ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1FEATURESWith Built-in Bias Resistors.1 6 DIM MILLIMETERS_A 1.6 + 0.05Simplify Circuit Design._A1 1.0 + 0.052 5_B 1.6 + 0.05Reduce a Quantity of Parts and Manufacturing Process._B1 1.2 + 0.05High Packing Den
krc857u-krc859u.pdf
SEMICONDUCTOR KRC857U~KRC859UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.DIM MILLIMETERS1 6_A 2.00 + 0.20Simplify Circuit Design._2 5 A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D _B1 1.25 + 0.1Hig
krc857f-krc859f.pdf
SEMICONDUCTOR KRC857F~KRC859FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05Thin Fine Pitch Super
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
