KRC886T Datasheet. Specs and Replacement

Type Designator: KRC886T  📄📄 

SMD Transistor Code: MVB

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 4.8 pF

Forward Current Transfer Ratio (hFE), MIN: 350

Noise Figure, dB: -

Package: TS6

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KRC886T datasheet

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KRC886T

SEMICONDUCTOR KRC881T KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K B K FEATURES DIM MILLIMETERS _ High emitter-base voltage VEBO=25V(Min) A 2.9 + 0.2 16 B 1.6+0.2/-0.1 High reverse hFE reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) _ C 0.70 0.05 + 2 5 _ + D 0.4 0.1 Low on resistance Ron=1 (Typ.) (IB=5mA) E 2.8... See More ⇒

Detailed specifications: KRC871U, KRC872E, KRC872U, KRC881T, KRC882T, KRC883T, KRC884T, KRC885T, TIP31, KRX101E, KRX101U, KRX102E, KRX102F, KRX102U, KRX103E, KRX103U, KRX104E

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