KTX214U Datasheet, Equivalent, Cross Reference Search
Type Designator: KTX214U
SMD Transistor Code: BI
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50(12)
V
Maximum Collector Current |Ic max|: 0.1(0.5)
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 320(200)
MHz
Collector Capacitance (Cc): 7.5
pF
Forward Current Transfer Ratio (hFE), MIN: 20(270)
Noise Figure, dB: -
Package: US6
KTX214U Transistor Equivalent Substitute - Cross-Reference Search
KTX214U Datasheet (PDF)
ktx214u.pdf
KTX214USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx214e.pdf
KTX214ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design. C
ktx213e.pdf
KTX213ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
ktx213u.pdf
KTX213USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx211e.pdf
KTX211ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit d
ktx216u.pdf
KTX216USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx212e.pdf
KTX212ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design. C
ktx211u.pdf
KTX211USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx212u.pdf
KTX212USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx215u.pdf
KTX215USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx215e.pdf
KTX215ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
