KRC235M Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC235M
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 6.8 kOhm
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO-92M
KRC235M Transistor Equivalent Substitute - Cross-Reference Search
KRC235M Datasheet (PDF)
krc231m-krc235m.pdf
SEMICONDUCTOR KRC231M~KRC235MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.AUDIO MUTING APPLICATION.INTERFACE CIRCUIT AND DRIVER BCIRCUIT APPLICATION. DIM MILLIMETERSOFEATURESA 3.20 MAXHM B 4.30 MAX With Built-in Bias Resistors.C 0.55 MAX_ Simplify Circuit Design. D 2.40 + 0.15E 1.27 Reduce a Quantity of Parts and Manufacturing Process.
krc231m-krc235m 1.pdf
SEMICONDUCTOR KRC231M~KRC235MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.AUDIO MUTING APPLICATION.INTERFACE CIRCUIT AND DRIVER BCIRCUIT APPLICATION. DIM MILLIMETERSOFEATURESA 3.20 MAXHM B 4.30 MAXWith Built-in Bias Resistors.C 0.55 MAX_Simplify Circuit Design. D 2.40 + 0.15E 1.27Reduce a Quantity of Parts and Manufacturing Proces
krc231s-krc235s.pdf
SEMICONDUCTOR KRC231S~KRC235STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.AUDIO MUTING APPLICATION.INTERFACE CIRCUIT AND DRIVER EL B LCIRCUIT APPLICATION. DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15FEATURESC 1.30 MAX23 D 0.40+0.15/-0.05With Built-in Bias Resistors.E 2.40+0.30/-0.201G 1.90Simplify Circuit Design.H 0.95R
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
