KRC283M
Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC283M
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 5.6 kOhm
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 25
V
Maximum Collector Current |Ic max|: 0.3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 30
MHz
Collector Capacitance (Cc): 4.8
pF
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
Package:
TO-92M
KRC283M
Transistor Equivalent Substitute - Cross-Reference Search
KRC283M
Datasheet (PDF)
9.1. Size:380K kec
krc281m-krc286m.pdf 
SEMICONDUCTOR KRC281M~KRC286MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.BFEATURES High emitter-base voltage : VEBO=25V(Min)High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)DIM MILLIMETERSOA 3.20 MAXLow on resistance : Ron=1 (Typ.) (IB=5mA)HM B 4.30 MAXC 0.55 MAXWith Built-in Bias Resistors._D 2.40 + 0
9.2. Size:357K kec
krc281s-krc286s.pdf
SEMICONDUCTOR KRC281S~KRC286STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EL B LFEATURES DIM MILLIMETERSHigh emitter-base voltage : VEBO=25V(Min) _+A 2.93 0.20B 1.30+0.20/-0.15High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)C 1.30 MAX23 D 0.40+0.15/-0.05Low on resistance : Ron=1(Typ.) (IB=5mA)
9.3. Size:26K kec
krc281u-krc286u.pdf
SEMICONDUCTOR KRC281U~KRC286UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.FEATURES EHigh emitter-base voltage : VEBO=25V(Min)M B MHigh reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)DIM MILLIMETERS_+A 2.00 0.20Low on resistance : Ron=1(Typ.) (IB=5mA)D2 _B 1.25 + 0.15With Built-in Bias Resistors.
Datasheet: 2SA1771
, 2SA178
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, BC557
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, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
