KTC8550A Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC8550A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92F
KTC8550A Transistor Equivalent Substitute - Cross-Reference Search
KTC8550A Datasheet (PDF)
ktc8550a.pdf
SEMICONDUCTOR KTC8550ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage -35 VG 0.85H 0.45VCEOCollector-Emitter Voltage -30 V_HJ 14
ktc8550.pdf
SEMICONDUCTOR KTC8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -35 VCollector-Base VoltageG 0.85H 0.45VCEO -30 VCollector-Emitter Voltage_HJ 14.0
ktc8550s.pdf
SEMICONDUCTOR KTC8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8050S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201MAXIMUM RATING (Ta=25) G 1.90H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO -35 VC
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
