All Transistors. KRA103M Datasheet

 

KRA103M Datasheet, Equivalent, Cross Reference Search


   Type Designator: KRA103M
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO-92M

 KRA103M Transistor Equivalent Substitute - Cross-Reference Search

   

KRA103M Datasheet (PDF)

 9.1. Size:389K  kec
kra107m-kra109m.pdf

KRA103M
KRA103M

SEMICONDUCTOR KRA107M~KRA109MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing ProcessHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00

 9.2. Size:391K  kec
kra107s-kra109s.pdf

KRA103M
KRA103M

SEMICONDUCTOR KRA107S~KRA109STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15C 1.30 MAXSimplify Circuit Design.23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30

 9.3. Size:377K  kec
kra107-kra109.pdf

KRA103M
KRA103M

SEMICONDUCTOR KRA107~KRA109TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias ResistorsSimplify Circuit DesignReduce a Quantity of Parts and Manufacturing ProcessN DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85EQUIVALENT CI

 9.4. Size:1013K  kec
kra101s-kra106s.pdf

KRA103M
KRA103M

SEMICONDUCTOR KRA101S~KRA106STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.EL B LFEATURESDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-0

 9.5. Size:422K  kec
kra101m-kra106m.pdf

KRA103M
KRA103M

SEMICONDUCTOR KRA101M~KRA106MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00

 9.6. Size:398K  kec
kra101-kra106.pdf

KRA103M
KRA103M

SEMICONDUCTOR KRA101~KRA106TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.B CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H

 9.7. Size:1357K  kexin
kra101s-106s.pdf

KRA103M
KRA103M

SMD Type TransistorsPNP TransistorsKRA101S ~ KRA106SSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features With Built-in Bias Resistors. Simplify Circuit Design.1 2 Reduce a Quantity of Parts and Manufacturing Process.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.IN(B)2.COMMON(E)3.OUT(C)BIAS RESISTOR VALUESTYPE NO.R1(k ) R2(k )OUTKRA101S

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC231

 

 
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