KRA105M Datasheet, Equivalent, Cross Reference Search
Type Designator: KRA105M
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO-92M
KRA105M Transistor Equivalent Substitute - Cross-Reference Search
KRA105M Datasheet (PDF)
kra107m-kra109m.pdf
SEMICONDUCTOR KRA107M~KRA109MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing ProcessHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00
kra107s-kra109s.pdf
SEMICONDUCTOR KRA107S~KRA109STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15C 1.30 MAXSimplify Circuit Design.23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30
kra107-kra109.pdf
SEMICONDUCTOR KRA107~KRA109TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias ResistorsSimplify Circuit DesignReduce a Quantity of Parts and Manufacturing ProcessN DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85EQUIVALENT CI
kra101s-kra106s.pdf
SEMICONDUCTOR KRA101S~KRA106STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.EL B LFEATURESDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-0
kra101m-kra106m.pdf
SEMICONDUCTOR KRA101M~KRA106MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00
kra101-kra106.pdf
SEMICONDUCTOR KRA101~KRA106TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.B CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H
kra101s-106s.pdf
SMD Type TransistorsPNP TransistorsKRA101S ~ KRA106SSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features With Built-in Bias Resistors. Simplify Circuit Design.1 2 Reduce a Quantity of Parts and Manufacturing Process.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.IN(B)2.COMMON(E)3.OUT(C)BIAS RESISTOR VALUESTYPE NO.R1(k ) R2(k )OUTKRA101S
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SB1104 | JC560A | 2SB1240 | 2SA1272 | 2SA1370F | 2SA1318R | RN2206
History: 2SB1104 | JC560A | 2SB1240 | 2SA1272 | 2SA1370F | 2SA1318R | RN2206
LIST
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