2SC1623QLT1 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SC1623QLT1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23

2SC1623QLT1 Transistor Equivalent Substitute - Cross-Reference Search

2SC1623QLT1 Datasheet (PDF)

0.1. Size:318K lrc
l2sc1623qlt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&ReelS-L2SC1623QLT1G

0.2. Size:282K lrc
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