All Transistors. H2N5087 Datasheet

 

H2N5087 Datasheet and Replacement


   Type Designator: H2N5087
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO-92
 

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H2N5087 Datasheet (PDF)

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H2N5087

Spec. No. : HE6210HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5087PNP EPITAXIAL PLANAR TRANSISTORDescriptionThis device was designed for low noise,high gain,general purpose amplifierapplications for 1uA to 25mA collector current.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...........

Datasheet: MMBT5551WT1 , MMBTA94LT1 , MMBTH10LT1 , H2584 , H2N3904 , H2N3906 , H2N4401 , H2N4403 , 2N3904 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 .

History: 2SC2730 | 2N1758

Keywords - H2N5087 transistor datasheet

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