H2N5087 Specs and Replacement
Type Designator: H2N5087
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO-92
H2N5087 Substitution
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H2N5087 datasheet
Spec. No. HE6210 HI-SINCERITY Issued Date 1998.02.01 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature .............. See More ⇒
Detailed specifications: MMBT5551WT1 , MMBTA94LT1 , MMBTH10LT1 , H2584 , H2N3904 , H2N3906 , H2N4401 , H2N4403 , BC548 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 .
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