HA8050S pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HA8050S Specs and Replacement

Type Designator: HA8050S

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92

HA8050S Substitution

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HA8050S datasheet

..1. Size:54K hsmc

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Spec. No. HE6116 HI-SINCERITY Issued Date 1997.09.08 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8550S Absolute Maximum Ratings Maximum Temperatu... See More ⇒

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Spec. No. HE6107 HI-SINCERITY Issued Date 1998.09.05 Revised Date 2004.11.29 MICROELECTRONICS CORP. Page No. 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A) ... See More ⇒

Detailed specifications: H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 , BD140 , HA8550 , HA8550S , HBC517 , HBC847 , HBC848 , HBC856 , HBD437T , HBD438T .