All Transistors. HA8050S Datasheet

 

HA8050S Datasheet and Replacement


   Type Designator: HA8050S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-92
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HA8050S Datasheet (PDF)

 ..1. Size:54K  hsmc
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HA8050S

Spec. No. : HE6116HI-SINCERITYIssued Date : 1997.09.08Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8550SAbsolute Maximum Ratings Maximum Temperatu

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 ha8050.pdf pdf_icon

HA8050S

Spec. No. : HE6107HI-SINCERITYIssued Date : 1998.09.05Revised Date : 2004.11.29MICROELECTRONICS CORP.Page No. : 1/5HA8050NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8050 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.TO-92Features High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NTE2547 | 2SC867A | 2SC5964-TD-E | ZTX214CL | BUX67 | RN1909 | ZTX3706L

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