HA8550 Datasheet, Equivalent, Cross Reference Search
Type Designator: HA8550
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO-92
HA8550 Transistor Equivalent Substitute - Cross-Reference Search
HA8550 Datasheet (PDF)
ha8550.pdf
Spec. No. : HE6108HI-SINCERITYIssued Date : 1997.09.05Revised Date : 2004.11.23MICROELECTRONICS CORP.Page No. : 1/5HA8550PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.FeaturesTO-92 High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)
ha8550s.pdf
Spec. No. : HE6109HI-SINCERITYIssued Date : 1997.09.05Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8550SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8050SAbsolute Maximum Ratings Maximum Temperatu
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BCX82