HA8550 Specs and Replacement
Type Designator: HA8550
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO-92
HA8550 Substitution
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HA8550 datasheet
Spec. No. HE6108 HI-SINCERITY Issued Date 1997.09.05 Revised Date 2004.11.23 MICROELECTRONICS CORP. Page No. 1/5 HA8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features TO-92 High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A) ... See More ⇒
Spec. No. HE6109 HI-SINCERITY Issued Date 1997.09.05 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8050S Absolute Maximum Ratings Maximum Temperatu... See More ⇒
Detailed specifications: H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 , HA8050S , TIP3055 , HA8550S , HBC517 , HBC847 , HBC848 , HBC856 , HBD437T , HBD438T , HBF422 .
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