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HBC517 Specs and Replacement

Type Designator: HBC517

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 220 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 30000

Noise Figure, dB: -

Package: TO-92

 HBC517 Substitution

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HBC517 datasheet

 ..1. Size:45K  hsmc

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HBC517

Spec. No. HA200217 HI-SINCERITY Issued Date 2002.09.01 Revised Date 2005.02.04 MICROELECTRONICS CORP. Page No. 1/4 HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature .............................................................................................. See More ⇒

Detailed specifications: H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 , HA8050S , HA8550 , HA8550S , BC557 , HBC847 , HBC848 , HBC856 , HBD437T , HBD438T , HBF422 , HBF423 , HD122 .

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