HBC517 Datasheet, Equivalent, Cross Reference Search
Type Designator: HBC517
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 220 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30000
Noise Figure, dB: -
Package: TO-92
HBC517 Transistor Equivalent Substitute - Cross-Reference Search
HBC517 Datasheet (PDF)
..1. Size:45K hsmc
hbc517.pdf
hbc517.pdf
Spec. No. : HA200217HI-SINCERITYIssued Date : 2002.09.01Revised Date : 2005.02.04MICROELECTRONICS CORP.Page No. : 1/4HBC517NPN EPITAXIAL PLANAR TRANSISTORDescriptionGeneral Purpose High Darlington TransistorTO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...........................................................................................
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
