HBC517 Specs and Replacement
Type Designator: HBC517
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 220 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30000
Package: TO-92
HBC517 Substitution
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HBC517 datasheet
Spec. No. HA200217 HI-SINCERITY Issued Date 2002.09.01 Revised Date 2005.02.04 MICROELECTRONICS CORP. Page No. 1/4 HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature .............................................................................................. See More ⇒
Detailed specifications: H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 , HA8050S , HA8550 , HA8550S , BC557 , HBC847 , HBC848 , HBC856 , HBD437T , HBD438T , HBF422 , HBF423 , HD122 .
Keywords - HBC517 pdf specs
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