HBF422 Specs and Replacement
Type Designator: HBF422
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO-92
HBF422 Substitution
- BJT ⓘ Cross-Reference Search
HBF422 datasheet
Spec. No. HE6404 HI-SINCERITY Issued Date 1993.03.18 Revised Date 2004.06.18 MICROELECTRONICS CORP. Page No. 1/4 HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................... See More ⇒
Spec. No. HE6403 HI-SINCERITY Issued Date 1993.03.18 Revised Date 2003.06.18 MICROELECTRONICS CORP. Page No. 1/4 HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ................................................................................................ See More ⇒
Detailed specifications: HA8550, HA8550S, HBC517, HBC847, HBC848, HBC856, HBD437T, HBD438T, 2N2222A, HBF423, HD122, HE8050, HE8050S, HE8550, HE8550S, HE9014, HE9015
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